Millimeter-wave Low Noise Amplifier Packaging Based on Wafer-level Fan-out Process
Technical features
• EMC reconstituted wafer is used to embed low-noise amplifier chip with back soldering molybdenum copper sheet, which is integrated with TMV adapter board to meet the requirements of direct grounding on the back of the chip and RDL grounding on the front.
• The front adopts a two-layer PI two-layer metal structure, which interconnects the RF signal with the surface GCPW transmission line through the wrong hole
• In the 24.25~33GHz frequency band, low noise gain deterioration after packaging ≤ 1dB, noise figure deterioration ≤ 0.1dB
• 2dB deterioration of port reflection coefficient
• EMC reconstituted wafer is used to embed low-noise amplifier chip with back soldering molybdenum copper sheet, which is integrated with TMV adapter board to meet the requirements of direct grounding on the back of the chip and RDL grounding on the front.
• The front adopts a two-layer PI two-layer metal structure, which interconnects the RF signal with the surface GCPW transmission line through the wrong hole
• In the 24.25~33GHz frequency band, low noise gain deterioration after packaging ≤ 1dB, noise figure deterioration ≤ 0.1dB
• 2dB deterioration of port reflection coefficient
Classification:
Package Antenna and Process Display
Keywords: EDA software and chip display
- Product Description
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